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N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.03 (max) Ultra High-Speed Switching SOP - 8 Package
Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems
General Description
The XP131A1330SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
Features
Low on-state resistance : Rds (on) = 0.03 ( Vgs = 4.5V ) Rds (on) = 0.04 ( Vgs = 2.5V ) Rds (on) = 0.07 ( Vgs = 1.5V ) Ultra high-speed switching Operational Voltage : 1.5V High density mounting : SOP - 8
Pin Configuration
S S S G 1 2 3 4 8 7 6 5 D D D D
Pin Assignment
PIN NUMBER 1-3 4 5-8 PIN NAME S G D FUNCTION Source Gate Drain
u
SOP - 8 Top View
Equivalent Circuit
Absolute Maximum Ratings
PARAMETER SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 +8 8 30 8 2.5 150 -55 to 150 Ta=25 OC UNITS V V A A A W
O
1 2 3 4
8 7 6 5
Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature
C C
O
N - Channel MOS FET ( 1 device built-in )
( note ) : When implemented on a glass epoxy PCB
Electrical Characteristics
DC characteristics
PARAMETER Drain Cut-Off Current Gate-Source Leakage Current Gate-Source Cut-Off Voltage Drain-Source On-State Resistance ( note ) Rds ( on ) SYMBOL Idss Igss Vgs (off ) CONDITIONS Vds = 20 , Vgs = 0V Vgs = 8 , Vds = 0V Id = 1mA , Vds = 10V Id = 4A , Vgs = 4.5V Id = 4A , Vgs = 2.5V Id = 4A , Vgs = 1.5V Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. | Yfs | Vf Id = 4A , Vds = 10V If = 8A , Vgs = 0V 0.5 0.025 0.03 0.045 22 0.85 1.1 MIN TYP MAX 10
1
Ta=25C UNITS A A V S V
1.2 0.03 0.04 0.07
Dynamic characteristics
u
PARAMETER Input Capacitance Output Capacitance Feedback Capacitance
SYMBOL Ciss Coss Crss
CONDITIONS Vds = 10V , Vgs = 0V f = 1 MHz
MIN
TYP 950 430 180
MAX
Ta=25C UNITS pF pF pF
Switching characteristics
PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = 5V , Id = 4A Vdd = 10V CONDITIONS MIN TYP 15 20
80 15
MAX
Ta=25C UNITS ns ns ns ns
Thermal characteristics
PARAMETER Thermal Resistance ( channel - surroundings ) SYMBOL Rth ( ch - a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS C / W
Electrical Characteristics
Drain Current vs. Drain/Source Voltage Drain Current vs. Gate/Source Voltage
Drain Current:Id (A)
Drain/Source Voltage:Vds (V)
Drain Current:Id (A)
Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance vs. Gate/Source Voltage
Drain/Source On-State Resistance:Rds (on) ( ) Drain/Source On-State Resistance:Rds (on) ( )
Drain/Source On-State Resistance vs. Drain Current
u
Gate/Source Voltage:Vgs (V)
Drain Current:Id (A)
Drain/Source On-State Resistance vs. Ambient Temperature
Drain/Source On-State Resistance:Rds (on) ( ) Gate/Source Cut-Off Voltage Variance :Vgs(off) Variance (V)
Gate/Source Cut-Off Voltage Variance vs. Ambient Temperature
Ambient Temp. :Topr ( )
Ambient Temp. :Topr ( )
Electrical Characteristics
Drain/Source Voltage vs. Capacitance Switching Time vs. Drain Current
Capacitance:C (pF)
Drain/Source Voltage:Vds (V)
Switching Time:t (ns)
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
Reverse Drain Current vs. Source/Drain Voltage
u
Gate/Source Voltage:Vgs (V)
Gate Charge:Qg (nc)
Reverse Drain Current:Idr (A)
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Standardized Transition Thermal resistance: s(t)
Pulse Width:PW (s)

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